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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 H35N03J N-Channel Enhancement-Mode MOSFET (25V, 35A) H35N03J Pin Assignment Tab 1 2 3 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features * RDS(on)=8.5m@VGS=10V, ID=30A * RDS(on)=13m@VGS=4.5V, ID=30A * Advanced trench process technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * Improved Shoot-Through FOM D Internal Schematic Diagram G S Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation TA=25oC TA=75 C Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted) *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board *2 o Symbol VDS VGS ID IDM PD TJ,Tstg EAS RJC RJA Value 25 20 35 140 57 23 -55 to 150 300 2.2 50 Units V V A A W W o C mJ O O C/W C/W Switching Test Circuit VDD Switching Waveforms ton td(on) toff tr td(off) 90% tf 90 % VIN VGEN RG G D VOUT Output, VOUT 10% 10% Inverted 90% 50% 50% S Input, VIN 10% Pulse Width H35N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. ELectrical Characteristics Characteristic Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage NOTE: Pulse Test: Pulse Width 300us, Duty Cycle2% Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 2/5 Symbol Test Condition Min. Typ. Max. Unit BVDSS RDS(on) RDS(on) VGS(th) IDSS IGSS Rg gfs VGS=0V, ID=250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=24V, VGS=0V VGS=20V, VDS=0V VDS=0V, VGS=1V at 1MHz VDS=10V, ID=35A 25 1 - 10 6.5 1.6 1 6 13 9 3 1 100 - V m V uA nA S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz VDD=15V, RL=15, ID=1A VGEN=10V, RG=24 VDS=15V, ID=35A, VGS=10V - 18.4 3.57 2.9 11.7 3.87 32.13 5.4 1176.3 268.43 142.67 nS pF nC IS VSD IS=20A, VGS=0V - 0.87 35 1.5 A V H35N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Fig.1 Output Characteristic I D - Drain-to-Source Current (A) 80 V GS= 5.0V, 6.0V, 10.0V Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 3/5 Fig.2 Transfer Characteristic I D - Drain Source Current (A) 60 VDS =10V 40 60 4.5V 4.0V 40 20 3.5V 3.0V 20 25oC TJ = 125oC -55oC 0 0 1 2 3 4 5 0 2 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig.3 On Resistance vs Drain Current RDS(ON) - On-Resistance (m ) RDS(ON) - On-Resistance (m ) 35 30 25 20 V GS = 4.5V 15 10 5 0 0 20 40 60 80 VGS=10.0V 50 Fig.4 On Resistance vs Gate to Source Voltage ID =30A 40 30 20 10 T J =25oC 0 2 4 6 8 10 125oC I D - Drain Current (A) VGS - Gate-to-Source Voltage (V) Fig.5 On Resistance vs Junction Temperature RDS(ON) - On-Resistance (Normalized) 1.6 1.4 1.2 1 0.8 0.6 -50 Fig. 6 Capacitance 3000 C - Capacitance (pF) 2500 2000 1500 1000 500 Coss, Crss 0 Ciss f=1MHz V GS=0V V GS = 10V ID =30A -25 0 25 50 75 100 o 125 150 0 5 10 15 20 25 T J - Junction Tem perature ( C) V DS - Drain-to-Source Voltage (V) H35N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 4/5 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 35N03 Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source N H a5 L a2 Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb-Free: " . " (Note) H Normal: None Pb Free Mark J 35N03 Date Code Control Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H35N03J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 5/5 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3oC/sec Pb-Free Assembly <3oC/sec 100oC 150oC 60~120 sec 150oC 200oC 60~180 sec <3oC/sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245oC 5oC 260 C +0/-5 C o o Dipping time 5sec 1sec 5sec 1sec H35N03J HSMC Product Specification |
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